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CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD7000E is an Enhanced version of the CMPD7000 Dual, Series Configuration, Ultra-High Speed Switching Diode. This device is manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. MARKING CODE: C5CE
SOT-23 CASE
FEATURED ENHANCED SPECIFICATIONS: BVR from 100V min to 120V min.
Peak Repetitive Reverse Voltage
Average Forward Current Peak Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS: (TA=25 C)
VF from 1.1V max to 1.0V max.
UNITS V mA mA mW C C/W
SYMBOL VRRM IO IFM PD TJ, Tstg JA
120 200 500 350 -65 to +150 357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V 300 IR VR=50V, TA=125C 100 IR VR=100V 500 IR=100A 120 150 BVR IF=1.0mA 0.55 0.59 0.65 VF VF IF=10mA 0.67 0.72 0.77 VF IF=100mA 0.85 0.91 1.0 CT VR=0, f=1.0MHz 1.5 2.6 trr IR=IF=10mA, RL=100, Rec. to 1.0mA 2.0 4.0
Enhanced Specification
UNITS nA A nA V V V V pF ns
R4 (27-January 2010)
CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: C5CE
R4 (27-January 2010)
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